Includes bibliographies and index.
|Statement||by P. D. Townsend, J. C. Kelly, N. E. W. Hartley.|
|Contributions||Kelly, J. C. joint author., Hartley, N. E. W., joint author.|
|LC Classifications||QC702.7.I55 T67|
|The Physical Object|
|Pagination||ix, 333 p. :|
|Number of Pages||333|
|LC Control Number||75196983|
Ion implantation, sputtering and their applications [P. D. Kelly, J. C. ; Hartley, N. E. W., Townsend] on *FREE* shipping on qualifying : Townsend, P. D. Kelly, J. C. ; Hartley, N. E. W. Book Title Ion implantation, sputtering and their applications: Author(s) Townsend, P D; Hartley, N E W; Kelly, J C: Publication New York, NY: Academic Press, - p. Subject code Subject category Other Fields of Physics: ISBN (This book at Amazon) (print version)Cited by: Not Available Book Review: Ion implantation, sputtering and their applications. P.D. Townsend, J.C. Kelly and N.E.W. Hartley (Academic Press, , pp.) £ Author: R.W. Cahn. Erosion and growth of solids stimulated by atom and ion beams / edited by G. Kiriakidis, G. Carter, J.L. Onesiphorus Hayles and family () / [Ruth E. Townsend] Early pioneers in and around Clunes / by May L. Townsend.
Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. Low-energy ion implantation: range ~ 1 to keV. Ion implantation is usually the low-energy process to introduce doping atoms into a semiconductor wafer to form devices and integrated circuits. Low-energy ion implanter is shown in Figure : Ishaq Ahmad, Waheed Akram. 3. Ion Implantation Ion Implantation Physics Accelerators for Ion Implantation Features and Commercial Potential of Ion Implantation Methods Application of Ion Implantation in Deliberate Modification of Material Surface Properties Microhardness Corrosion Resistance Wear Resistance Fatigue. Whereas the initial development of focused ion beam (FIB) instruments was driven by their unique capabilities for computer chip repair and circuit modification in semiconductor technology, present FIB applications support a much broader range of scientific and technological disciplines [ 1, 2 ].Cited by: 3.
In most cases, sputter deposition uses a magnetically enhanced glow discharge or magnetron discharge to produce the ions which bombard and sputter the cathode material. In the?rst chapter of this book (Chap. 1), the details of the sputter process are discussed. Essential to sustain the discharge is the electron emission during ion bombardment. Additional Physical Format: Online version: Townsend, P.D. (Peter David). Ion implantation, sputtering and their applications. London ; New York: Academic Press, The underlying concept behind ion implantation is simple. A beam of ions from any source is accelerated at various voltages and allowed to impinge upon a specimen surface such that the ions interact with that surface and some are embedded in it. The . Freeman ion source is the ion implantation and industrial applications, especially for semiconductor purposes. Penning ion sources are found to be more elements for their applications in particle accelerators, atomic physics, etc. (3) The extracted ion current. Study of Plasma and Ion Beam Sputtering ProcessesFile Size: KB.